A compact SCR model using advanced BJT models and standard SPICE elements
نویسندگان
چکیده
منابع مشابه
Compact modeling of BJT self-heating in SPICE
Self-heating effects in bipolar junction transistors have been incorporated into PSpice dc and ac analyses. The effects are intrinsic to the operation of the transistor, and are treated within the device model, avoiding the need for thermal subcircuits. A physical thermal impedance model is provided, which allows prediction of thermal impedance for devices with rectangular emitters from device ...
متن کاملElements of Statistical SPICE Models
We discuss several elements of statistical SPICE models and present our solutions. We present (i) a solution of automatically detecting Monte Carlo vs. skewed simulations, (ii) a method of modeling an arbitrarily given asymmetric or symmetric distribution, (iii) a hierarchical structure of the skewing parameters of many process/device statistical distributions for skewed simulations, (iv) a tec...
متن کاملExtraction of SPICE BJT model parameters in BIPOLE3 using optimization methods
AbstructWe present a method for SPICE model parameter extraction for a bipolar transistor in the active and quasisaturation modes. It uses the capabilities of the BIPOLE3 [l] simulator to enhance the optimization procedure. Comparisons are made between the Gummel-Poon, the VBIC95, and the SGSThomson Microelectronics SPICE model results for IC (1 ). I R ( T A , ). 3(1( ). f r ( I c ) , and Ir(1i...
متن کاملDesign and Implementation of a Compact Super-Wideband Printed Antipodal Antenna Using Fractal Elements
A compact printed fractal antipodal bow-tie antenna is designed and implemented to simultaneously cover the operations in the C, X, and Ku-bands. It is demonstrated that by addition of small fractal elements at the sides of hexagonal arms of the bow-tie, a wide operating frequency range of 3.3 to 19.1 GHz can be covered while antenna size is only 30×34×1.2 mm3. In order to match the antenna to ...
متن کاملA Design of BJT-based ESD Protection Device combining SCR for High Voltage Power Clamps
This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) 0.18μm. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verifi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Science China Information Sciences
سال: 2016
ISSN: 1674-733X,1869-1919
DOI: 10.1007/s11432-016-0072-3